Fundamentals of Modern VLSI Devices [Yuan Taur, Tak H. Ning] on . *FREE* shipping on qualifying offers. This book examines in detail the basic. Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. James Kao, Siva Narendra, Anantha Chandrakasan, Subthreshold leakage modeling and reduction techniques, Proceedings of the IEEE/ACM.

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Each chapter concludes with real-life exercises that actually extend the depth of analysis, getting the reader directly involved. GreenYouth rated it liked it Apr 22, Amazon Advertising Find, attract, and funndamentals customers. My library Help Advanced Book Search.

Fundamentals of Modern VLSI Devices

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Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices. Write a customer review. Vlssi Rapids Fun stories for kids on the go. Amazon Renewed Refurbished products with a warranty.

Watson Research Center, New York, where he has worked for over 35 years. Zhihong added it Sep 30, They also discuss in detail the scaling, and physical limits to the scaling, of CMOS and bipolar devices. Chris Zeh rated it liked it Jun 27, Set up a giveaway. Navaneet marked it as to-read Dec 30, It will also be a valuable reference volume for practicing engineers involved in research and development in modegn electronics industry.


Fundamentals of Modern VLSI Devices: Yuan Taur: : Books

faur I learn a lot after I finish the first round of read of this book. Just a moment while we sign you in to your Goodreads account. They are in fact the insight from author’s tens of years of device design experience. Trivia About Fundamentals of M The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. Goodreads is the world’s largest site for readers with over 50 million reviews.

The new edition expands on this by introducing major new topics related to memories, silicon on insulator devices, devces scale length and high field modeling as applied to MOSFETs. Modern Semiconductor Devices for Integrated Circuits. Thanks for telling us about the problem. East Dane Designer Men’s Fashion. You must read it and think about the words and equations again and again. Customers who viewed this item also viewed.

Semiconductor Physics And Devices: Deepu marked it as to-read Jul 02, The Best Books of Review “For the past several years, I’ve taught from Taur and Ning’s book because it’s best at connecting advanced device physics to real world device, circuit, and system technology. You cannot only rely on this book to be a guru in device physics. Sayan Ray marked it as to-read Mar 28, Mohammed Beig rated it liked it Feb 22, Amazon Restaurants Food delivery from local restaurants.


Watson Research Center where he won numerous invention and achievement awards. Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. By using our website you agree to our use of cookies. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom.

We want to pay for a good book, not only good in content but also in quality. The book is logically organized. But one thing make me to rate one star to 4 star. I must revise my previous comment about this book. For the starter I will suggest to pick up Tsividis book on “Operation and modeling of MOS Transistor” and concurrently try the present volume.